Search results for "Silica gla"
showing 10 items of 15 documents
Luminescence of silica glass containing aluminum oxide
2004
Abstract Optical properties of silica glass with different doping of Al 2 O 3 up to 1.5 mol% were studied. Alumina stimulates creation of a luminescence centers with specific band at 3.3 eV. A new band at 8.2 eV appears in luminescence excitation spectra. There is transport of energy to other luminescence centers associated with an impurity (Ag, Ce) at this energy. Alumina stimulates creation of E′ centers under γ-irradiation beside trapped hole on AlO 4 tetrahedron as well as creation of a silicon related oxygen deficient center (SiODC) under cathodoexcitation. Visually, the samples look inhomogeneous even after γ-irradiation. The explanation could be heterogeneity of the samples. Alumina …
Gd 3+ -doped sol-gel silica glass for remote ionizing radiation dosimetry
2019
Gadolinium-doped silica glass was prepared, using the sol-gel route, for ionizing radiation dosimetry applications. Such a glassy rod was drawn to a cane at a temperature of 2000 °C. The structural and optical properties of the obtained material were studied using Raman, optical absorption, and photoluminescence spectroscopies. Thereafter, a small piece of this Gd-doped scintillating cane was spliced to a transport passive optical fiber, allowing the remote monitoring of the X-ray dose rate through a radioluminescence (RL) signal. The sample exhibited a linear RL intensity response versus the dose rate from 125 µGy(SiO2)/s up to 12.25 Gy/s. These results confirm the potentialities of this m…
Near-IR- and UV-femtosecond laser waveguide inscription in silica glasses
2019
The influence of laser parameters on silica based waveguide inscription is investigated by using femtosecond laser pulses at 1030 nm (near-IR) and at 343 nm (UV). Negative phase contrast microscopy technique is used to measure the refractive index contrast for different photo-inscribed waveguides and shows the effects of both laser wavelength and scanning speed. In particular, UV photons have a higher efficiency in the waveguide production process as also confirmed by the lower optical losses at 1550 nm in these waveguides. These measurements are combined with micro-Raman and photoluminescence techniques, highlighting that laser exposure induces both structural modification of the silica an…
Luminescence of localized states in oxidized and fluorinated silica glass
2019
This work was supported by the Latvian Science Council Grant No lzp-2018/1-0289.
Luminescence of silicon Dioxide — silica glass, α-quartz and stishovite
2011
Abstract This paper compares the luminescence of different modifications of silicon dioxide — silica glass, α-quartz crystal and dense octahedron structured stishovite crystal. Under x-ray irradiation of pure silica glass and pure α-quartz crystal, only the luminescence of self-trapped exciton (STE) is detected, excitable only in the range of intrinsic absorption. No STE luminescence was detected in stishovite since, even though its luminescence is excitable below the optical gap, it could not be ascribed to a self-trapped exciton. Under ArF laser excitation of pure α-quartz crystal, luminescence of a self-trapped exciton was detected under two-photon excitation. In silica glass and stishov…
Structural organization of silanol and silicon hydride groups in the amorphous silicon dioxide network
2011
We present a study on the effects of an isothermal annealing treatment on a-SiO 2 having a significant content of silanol hydride groups (Si-H). We examined the properties of the IR absorption bands of silanol (Si-OH) and silicon hydride groups as a function of the duration of the thermal treatment. We showed that the Si-OH and Si-H groups contents decrease in a linearly correlated way. The annealing dynamics suggest that the two species are close to each other in the amorphous network. We showed that the profile of the silanol groups absorption band is the same as that observed in other commercial a-SiO 2 materials, irrespectively of the concomitant presence of nearby Si-H groups, and, mor…
Luminescence of non-bridging oxygen hole centers as a marker of particle irradiation of {\alpha}-quartz
2021
The origin of the "red" emission bands in the 600 nm-700 nm region, observed in quartz crystals used for luminescence dating and environmental dosimetry, is still controversial. Their reported spectral and lifetime characteristics are often similar to those of oxygen dangling bonds ("non-bridging oxygen hole centers, NBOHCs") in glassy silicon dioxide. The presence of these "surface radical type" centers in quartz crystal requires sites with highly disordered local structure forming nano-voids characteristic to the structure of glassy SiO2. Such sites are introduced in the tracks of nuclear particles ({\alpha}-irradiation, neutrons, ions). In case of electrons they are created only at large…
Laser wavelength effects on the refractive index change of waveguides written by femtosecond pulses in silica glasses
2018
We investigate the influence of two fs-laser wavelengths (343 and 800 nm) on the induced refractive index change (Δn) of waveguides written in silica materials. Results show that Δn is higher for waveguides photo-inscribed with UV photons.
Absorption edge in silica glass
2005
Measurements of optical absorption in the v-UV range in a variety of silica glass are used to determine the width of the absorption edge (Urbach energy). Measured values range from 60 meV up to 180 meV. So high a variability over silica types is tentatively ascribed to the different disorder degree, which characterizes different materials.
Raman spectroscopy study of β-irradiated silica glass
2003
International audience; Natural and synthetic silica glass samples with different OH content have been submitted to β-irradiation at different doses from 106 to 5 × 109 Gy in a Van de Graaff accelerator. Structural changes under irradiation have been analyzed by Raman spectroscopy. The main findings are: (i) a decrease of the Si–O–Si angular dispersion and the average Si–O–Si angle as a function of dose and (ii) an increase of number of three-membered SiO4 ring concentration during irradiation. These results show therefore that purely electronic excitation from β-irradiation induces in a-SiO2 small but significant structural changes of the SiO4 membered ring statistics (size and dispersion)…